APTM50TDUM65PG APTM50TDUM65PG ? rev 1 july, 2006 www.microsemi.com 1 ? 6 s3/ s4 g5 d5 s5 s5/ s6 s1 d1 g1 s1/s2 s3 d3 g3 d6 s6 g6 d2 g2 s2 d4 s4 g4 g5 g6 s6 s5 g3 d 3 d 5 s3/s 4 g4 s4 d 6 d 4 s3 d 1 s5/s6 s2 g2 s1 g1 d 2 s1/s 2 absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followed . see application note apt0502 on www.microsemi.com s ymbol parameter max ratings unit v dss drain - source breakdown voltage 500 v t c = 25c 51 i d continuo us drain current t c = 80c 38 i dm pulsed drain current 204 a v gs gate - source voltage 30 v r dson drain - source on resistance 78 m ? p d maximum power dissipation t c = 25c 390 w i ar avalanche current (repetitive and non repetitive) 51 a e ar repetitive avalanche energy 50 e as single pulse avalanche energy 3000 mj v dss = 500v r dson = 65m ? typ @ tj = 25c i d = 51a @ tc = 25c applicatio n ? ac switches ? switched mode power supplies ? uninterruptible power supplies features ? power mos 7 ? mosfets - low r dson - low input and miller capacitance - low gate c harge - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? high level of integration benefits ? outsta ndi ng perfor ma nce at hi gh freq ue nc y operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? very low (12mm) profile ? each leg can be easily paralleled to achieve a dual commo n source configuratio n of three ti mes the current capability ? rohs compliant triple dual common source mosfet power module
APTM50TDUM65PG APTM50TDUM65PG ? rev 1 july, 2006 www.microsemi.com 2 ? 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 500v t j = 25c 100 i dss zero gate voltage drain current v gs = 0v,v ds = 400v t j = 125c 500 a r ds(on) drain ? source on resistance v gs = 10v, i d = 25.5a 65 78 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 3 5 v i gs s gate ? source leakage current v gs = 30 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c is s input capacitance 7000 c oss output capacitance 1400 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 90 pf q g total gate charge 140 q gs gate ? source charge 40 q gd gate ? drain charge v gs = 10v v bus = 250v i d = 51a 70 nc t d(on) tur n-o n delay ti me 21 t r rise time 38 t d(off) turn-off delay time 75 t f fall time inductive switching @ 125c v gs = 15v v bus = 333v i d = 51a r g = 3 ? 93 ns e on turn-on switching energy 1035 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 333v i d = 51a, r g = 3 ? 845 j e on turn-on switching energy 1556 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 333v i d = 51a, r g = 3 ? 1013 j source - drain diode ratings and characteristics symbol characteristic test conditions min typ max unit tc = 25c 51 i s continuo us so urce c urrent (body diode) tc = 80c 38 a v sd diode forward voltage v gs = 0v, i s = - 51a 1.3 v dv/dt peak diode recovery x 8 v/ns t rr reverse recovery time t j = 25c 700 ns q rr reverse recovery charge i s = - 51a v r = 333v di s /dt = 100a/s t j = 25c 15.4 c x dv/dt numbers reflect the limitations of the circuit rather than the device itself. i s - 51a di/dt 700a/s v r v dss t j 150c
APTM50TDUM65PG APTM50TDUM65PG ? rev 1 july, 2006 www.microsemi.com 3 ? 6 thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance igbt 0.32 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m6 3 5 n.m wt package weight 250 g sp6-p package outline (dimensions in mm) 5 places (3:1) see application note 1902 - mounting instructions for sp6-p (12mm) power modules on www.microsemi.com
APTM50TDUM65PG APTM50TDUM65PG ? rev 1 july, 2006 www.microsemi.com 4 ? 6 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 5v 5.5v 6v 6.5v 7v 8v 0 40 80 120 160 200 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =10&15v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 25 50 75 100 125 150 02468 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.9 0.95 1 1.05 1.1 0 102030405060 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 25.5a 0 10 20 30 40 50 60 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTM50TDUM65PG APTM50TDUM65PG ? rev 1 july, 2006 www.microsemi.com 5 ? 6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 25.5a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50-25 0 255075100125150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10 ms 1 ms 100 us 100 ms 0.1 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited by r dson single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =100v v ds =250v v ds =400v 0 2 4 6 8 10 12 14 0 255075100125150175 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =51a t j =25c
APTM50TDUM65PG APTM50TDUM65PG ? rev 1 july, 2006 www.microsemi.com 6 ? 6 t j =25c t j =150c 1 10 100 1000 0.20.40.60.8 1 1.21.41.6 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage delay times vs current td(on) td(off) 10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80 i d , drain current (a) t d(on) and t d(off) (ns) v ds =333v r g =3 ? t j =125c l=100 h rise and fall times vs current t r t f 0 20 40 60 80 100 120 140 160 10 20 30 40 50 60 70 80 i d , drain current (a) t r and t f (ns) v ds =333v r g =3 ? t j =125c l=100 h switching energy vs current e on e off 0 0.5 1 1.5 2 2.5 3 10 20 30 40 50 60 70 80 i d , drain current (a) switching energy (mj) v ds =333v r g =3 ? t j =125c l= 100 h e on e off e off 0 1 2 3 4 5 0 5 10 15 20 25 30 35 40 45 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =333v i d =51a t j =125c l=100h hard switching zcs zvs 0 50 100 150 200 250 300 350 400 450 10 15 20 25 30 35 40 45 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =333v d=50% r g =3 ? t j =125c t c =75c m icros e mi re se rve s the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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